vishay siliconix dg3516, dg3517 document number: 73404 s11-1185-rev. d, 13-jun-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 300 mhz, 2.5 ? , dual spdt analog switches description the dg3516, dg3517 are dual spd t analog switches which operate from 1.8 v to 5.5 v sing le rail power supply. they are design for audio, video, and usb switching applications. the devices have 2.5 ? on-resistance and 300 mhz 3db bandwidth. 0.2 ? on-resistance matching and 1 ? flatness make the device high linearity. the devices are 1.6 v logic compatible within the full operation voltage range. these switches are built on a sub-micron high density process that brings low power consumption and low voltage performance. the switches are packaged in micro foot chip scale package of 4 mm x 3 mm bump array. as a committed partner to the community and environment, vishay siliconix manufactures this product with the lead (pb)-free device terminations. for micro foot analog switch products manufactured with tin/silver/copper (snagcu) device termination, the lead (pb)-free ?-e1? suffix is being used as a designator. features ? halogen-free according to iec 61249-2-21 definition ? 1.8 v to 5.5 v operation ?2.5 ? at 2.7 v r on ? 300 mhz - 3 db bandwidth ? esd method 3015.7 > 2 kv ? latch-up current 200 ma (jesd 78) ? 1.6 v logic compatible ? compliant to rohs directive 2002/95/ec benefits ? space saving micro foot ? package ? high linearity ? low power consumption ? high bandwidth ? full rail signal swing range applications ? cellular phones ?mp3 ? media players ? modems ? hard drives ? pcmcia functional block diagram and pin configuration dg3516/dg3517 micro foot 10-bump nc 2 no 2 no 1 nc 1 gnd v+ xxx 3516 a1 locator 3516 = example base part number xxx = data/lot traceabiliity code nc 2 no 2 1 in 2 1 a 234 b c top view gnd v+ in 1 nc 1 no 1 in 2 in 1 com 2 com 1 no 2 nc 2 com 1 in 2 1 a 234 b c top view com 2 gnd v+ in 1 no 1 nc 1 dg3516 dg3517 device marking com com 2 truth table logic nc1 and nc2 no1 and no2 0 on off 1offon ordering information temp. range package part number - 40 c to 85 c micro foot: 10 bump (4 x 3, 0.5 mm pitch, 238 m bump height) DG3516DB-T5-E1 dg3517db-t5-e1
www.vishay.com 2 document number: 73404 s11-1185-rev. d, 13-jun-11 vishay siliconix dg3516, dg3517 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. signals on nc, no, or com or in exceeding v+ will be clamped by inte rnal diodes. limit forward diode current to maximum curr ent ratings. b. refer to ipc/jedec (j-std-020b). c. all bumps welded or soldered to pc board. d. derate 5.7 mw/c above 70 c. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. absolute maximum ratings parameter limit unit reference v+ to gnd - 0.3 to + 6 v in, com, nc, no a - 0.3 to (v+ + 0.3) continuous current (no, nc, com) 100 ma peak current (pulsed at 1 ms, 10 % duty cycle) 200 storage temperature (d suffix) - 65 to 150 c package solder reflow conditions b ir/convection 250 esd per method 3015.7 > 2 kv power dissipation (packages) c micro foot: 10 bump (4 mm x 3 mm) d 457 mw specifications (v+ = 3 v) parameter symbol test conditions otherwise unless specified v+ = 2.7 v to 3.6 v, v in = 0.5 v or 1.4 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance d r on v+ = 2.7 v i no , i nc = 10 ma v com = 1.5 v room full 2.5 3.5 3.8 ? r on flatness d r on flatness v com = 1, 1.5, 2 v room 0.52 1 on-resistance match between channels d ? r ds(on) v com = 1.5 v room 0.25 switch off leakage current i no(off) i nc(off) v+ = 3.3 v, v no , v nc = 0.3 v/3 v, v com = 3 v/0.3 v room full - 2 - 20 2 20 na i com(off) room full - 2 - 20 2 20 channel-on leakage current i com(on) v+ = 3.3 v, v no , v nc = v com = 0.3 v/3 v room full - 2 - 20 2 20 digital control input high voltage d v inh full 1.4 v input low voltage v inl full 0.5 input capacitance c in full 5 pf input current i inl or i inh v in = 0 v or v+ full 1 1 a
document number: 73404 s11-1185-rev. d, 13-jun-11 www.vishay.com 3 vishay siliconix dg3516, dg3517 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications (v+ = 3 v) parameter symbol test conditions otherwise unless specified v+ = 2.7 v to 3.6 v, v in = 0.5 v or 1.4 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b dynamic characteristics tu r n - o n t i m e t on v+ = 2.7 v, v no or v nc = 1.5 v r l = 300 ? , c l = 35 pf room full 21 51 52 ns turn-off time t off room full 15 45 46 break-before-make time t d full 1 charge injection d q inj c l = 1 nf, v gen = 2 v, r gen = 0 ? room 1 pc off-isolation d oirr r l = 50 ?? , c l = 5 pf f = 1 mhz room - 74 db f = 10 mhz room - 54 crosstalk d x ta l k f = 1 mhz room - 76 f = 10 mhz room - 56 n o , n c off capacitance d c no(off) v in = 0 or v+, f = 1 mhz room 12 pf c nc(off) room 12 channel-on capacitance d c no(on) room 40 c nc(on) room 40 power supply power supply current i+ v in = 0 v or v+ room full 1 1 a
www.vishay.com 4 document number: 73404 s11-1185-rev. d, 13-jun-11 vishay siliconix dg3516, dg3517 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. room = 25 c, full = as determined by the operating suffix. b. typical values are for design aid only, not guaranteed nor subject to production testing. c. the algebraic convention whereby the most negative value is a minimum and the most po sitive a maximum, is used in this datas heet. d. guarantee by design, nor s ubjected to production test. e. v in = input voltage to perform proper function. f. guaranteed by 5 v testing, not production tested. specifications (v+ = 5 v) parameter symbol test conditions otherwise unless specified v+ = 4.2 v to 5.5 v, v in = 0.8 v or 2 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance d r on v+ = 4.2 v i no , i nc = 10 ma v com = 3.5 v room full 2.2 2.9 3.1 ? r on flatness d r on flatness v com = 1, 2, 3.5 v room 0.53 1 on-resistance match between channels d ? r ds(on) v com = 3.5 v room 0.25 switch off leakage current i no(off) i nc(off) v+ = 5.5 v, v no , v nc = 1 v/4.5 v, v com = 4.5 v/1 v room full - 2 - 20 2 20 na i com(off) room full - 2 - 20 2 20 channel-on leakage current i com(on) v+ = 5.5 v, v no , v nc = v com = 1 v/4.5 v room full - 2 - 20 2 20 digital control input high voltage d v inh full 2 v input low voltage v inl full 0.8 input capacitance c in full 5 pf input current i inl or i inh v in = 0 or v+ full 1 1 a dynamic characteristics tu r n - o n t i m e t on v+ = 4.2 v, v no or v nc = 3 v r l = 300 ? , c l = 35 pf room full 15 45 46 ns turn-off time t off room full 12 42 43 break-before-make time t d full 1 charge injection d q inj c l = 1 nf, v gen = 2 v, r gen = 0 ? room 1 pc off-isolation d oirr r l = 50 ?? , c l = 5 pf f = 1 mhz room - 74 db f = 10 mhz room - 54 crosstalk d x ta l k f = 1 mhz room - 78 f = 10 mhz room - 56 n o , n c off capacitance d c no(off) v in = 0 or v+, f = 1 mhz room 12 pf c nc(off) room 12 channel-on capacitance d c no(on) room 40 c nc(on) room 40 power supply power supply current i+ v in = 0 v or v+ room full 1 1 a
document number: 73404 s11-1185-rev. d, 13-jun-11 www.vishay.com 5 vishay siliconix dg3516, dg3517 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) r on vs. v com and single supply voltage 0 1 2 3 4 5 6 7 8 01234 v com - analog voltage (v) t = 25 c i s = 10 ma - on-resistance ( ? ) r on v+ = 1.8 v v+ = 2.0 v v+ = 2.7 v v+ = 3.0 v v+ = 3.6 v v+ = 4.2 v v+ = 5.0 v v+ = 5.5 v 5 r on vs. analog voltage and temperature supply current vs. temperature 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v com - analog voltage (v) - on-resistance ( ? ) r on v+ = 2.7 v i s = 10 ma 85 c 25 c - 40 c - 60 - 40 - 20 0 20 40 60 80 100 10 10 000 100 000 temperature (c) 100 1000 i+ - supply current (na) v+ = 3.0 v v in = 0 v r on vs. analog voltage and temperature supply current vs. input switching frequency 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 012345 v com - analog voltage (v) - on-resistance ( ? ) r on v+ = 4.2 v i s = 10 ma 85 c 25 c - 40 c 10 10k 100k 10m 100 1k 1m 100 ma 10 ma 1 ma 100 a 10 a 1 a 100 na 1 na input switching frequency (hz) i+ - supply current (a) v+ = 3.0 v 10 na
www.vishay.com 6 document number: 73404 s11-1185-rev. d, 13-jun-11 vishay siliconix dg3516, dg3517 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) leakage current vs. temperature switching time vs. temperature switching threshold vs. supply voltage - 60 - 40 - 20 0 20 40 60 80 100 1 10 000 temperature (c) v+ = 3.0 v 100 1000 leakage current (pa) i com(on) i no(off) , i nc(off) 10 i com(off) 0 5 10 15 20 25 - 60 - 40 - 20 0 20 40 60 80 100 / t on - switching t ime (ns) t off t off v+ = 4.2 v temperature (c) t on v+ = 2.7 v t off v+ = 2.7 v t on v+ = 4.2 v 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0123456 v+ - supply voltage (v) - switching threshold (v) v t leakage vs. analog voltage insertion loss, off-isolation crosstalk vs. frequency charge injection vs. analog voltage - 800 - 600 - 400 - 200 0 200 400 600 800 0.0 0.6 1.2 1.8 2.4 3.0 3.6 v com , v no , v nc - analog voltage (v) leakage current (pa) v+ = 3.6 v i com(on) i com(off) i no(off) , i nc(off) 100 k - 90 10m 10 - 70 - 50 100m 1g 1m frequency (hz) (db) loss, oirr, x talk - 30 - 10 oirr x talk v+ = 3.0 v r l loss - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 012345 v com - analog voltage (v) q - charge injection (pc) v+ = 3.0 v v+ = 2.0 v v+ = 5.0 v
document number: 73404 s11-1185-rev. d, 13-jun-11 www.vishay.com 7 vishay siliconix dg3516, dg3517 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ in no or nc c l 35 pf com logic input r l 300 ? v out gnd v+ 50 % 0 v logic input switch output t on t off logic ?1? = switch on logic input waveforms inverted for switches that have the opposite logic sense. 0 v switch output v out =v com ( r l r l +r on ) 0.9 x v out t r < 5 ns t f < 5 ns v inh v inl figure 2. break-before-make interval c l (includes fixture and stray capacitance) nc v no no v nc 0 v logic input switch output v o v nc = v no 90 % t d in com v+ gnd v+ c l 35 pf v o r l 300 ? v inl v inh t r < 5 ns t f < 5 ns t d figure 3. charge injection c l = 1 nf r gen v out com v in = 0 - v+ in gnd v+ v+ + nc or no off on on in ? v out v out q = ? v out x c l in depends on switch configuration: input polarity determined by sense of switch.
www.vishay.com 8 document number: 73404 s11-1185-rev. d, 13-jun-11 vishay siliconix dg3516, dg3517 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits figure 4. off-isolation in gnd nc or no 0 v, 2.4 v 10 nf com off isolation = 20 log v com v no / nc r l analyzer v+ v+ com figure 5. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf v+ v+
document number: 73404 s11-1185-rev. d, 13-jun-11 www.vishay.com 9 vishay siliconix dg3516, dg3517 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline micro foot: 10 bump (4 mm x 3 mm, 0.5 mm pitch, 0.238 mm bump height) notes (unless other wise specified): a. bump is lead (pb)-free sn/ag/cu. b. non-solder mask defined copper landing pad. c. laser mark on silicon die back; back-lapped, no coat ing. shown is not actual marking; sample only. notes: a. use millimeters as the primary measurement. vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73404 . index-bump a1 note c top side (die back) xxx 3516 recommended land pattern 0.5 0.5 10 x ? 0.150 ? 0.229 note b solder mask ? ? pad diameter + 0.1 bump note a 321 a b e d a a 2 a 1 s s e silicon c 4 b diameter e e e e dim. millimeters a inches min. max. min. max. a 0.688 0.753 0.0271 0.0296 a 1 0.218 0.258 0.0086 0.0102 a 2 0.470 0.495 0.0185 0.0195 b 0.306 0.346 0.0120 0.0136 d 1.980 2.020 0.0780 0.0795 e 1.480 1.520 0.0583 0.0598 e 0.5 basic 0.0197 basic s 0.230 0.270 0.0091 0.0106
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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